Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics

A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3210-3216
Main Authors: Najafizadeh, L., Bellini, M., Prakash, A.P.G., Espinel, G.A., Cressler, J.D., Marshall, P.W., Marshall, C.J.
Format: Article
Language:English
Subjects:
BiCMOS analog integrated circuits
Circuits
CMOS technology
Electric potential
Extreme environments
Germanium silicon alloys
heterojuction bipolar transistors
Heterojunction bipolar transistors
Moon
News
Proton irradiation
proton radiation effects
Protons
Silicon germanides
Silicon germanium
Space technology
Temperature distribution
Tolerances
Voltage
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Summary:A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme environment operational conditions is presented. The voltage reference circuits were designed in two distinct SiGe BiCMOS technology platforms (first generation (50 GHz) and third generation (200 GHz)) in order to investigate the effect of technology scaling. The circuits were irradiated at both room temperature and at 77 K. Measurement results from the experiments indicate that the proton-induced changes in the SiGe bandgap references are minor, even down to cryogenic temperatures, clearly good news for the potential application of SiGe mixed-signal circuits in emerging extreme environments
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.885381