Single-Event Burnout and Avalanche Characteristics of Power DMOSFETs

Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs suggest that the single-event burnout (SEB) failure is determined by the device's avalanche characteristics and confirm SEB failure mechanism is due to the turn-on of parasitic bipolar transistor. The heavy i...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3379-3385
Main Authors: Liu, S., Boden, M., Girdhar, D.A., Titus, J.L.
Format: Article
Language:English
Subjects:
Avalanche simulations
Avalanches
Bipolar transistors
buffer layer
Buffer layers
Cranes
Discrete event simulation
Failure analysis
Fuel consumption
heavy ion beam
Ion beams
MOSFET
MOSFETs
Nuclear power generation
power DMOSFET
Predictive models
quasi-stationary
Rectifiers
SEB
Simulation
Single Event Effects
single-event burnout
Testing
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Description
Summary:Analyses of quasi-stationary avalanche simulations on radiation-hardened power MOSFETs suggest that the single-event burnout (SEB) failure is determined by the device's avalanche characteristics and confirm SEB failure mechanism is due to the turn-on of parasitic bipolar transistor. The heavy ion beam is only acting as a trigger. Simulation results on various 600 V and 250 V radiation-hardened power MOSFETs from International Rectifier are compared to an extensive set of single event effect test results and prove quasi-stationary avalanche simulation is capable of evaluating and predicting SEB susceptibility
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.884971