High-Performance InGaAs/InP Single-Photon Avalanche Photodiode

In 0.53 Ga 0.47 As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2007-07, Vol.13 (4), p.887-894
Main Authors: Mingguo Liu, Chong Hu, Xiaogang Bai, Xiangyi Guo, Campbell, J.C., Zhong Pan, Tashima, M.M.
Format: Article
Language:English
Subjects:
Afterpulsing
array
Arrays
Avalanche photodiodes
Avalanches
Counting
Counting circuits
Cryptography
dark count rate (DCR)
Dark current
Diodes
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
Indium phosphides
Optical pulses
Optical receivers
Photodiodes
Quantum electronics
single-photon detection efficiency (SPDE)
Timing
timing resolution
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Summary:In 0.53 Ga 0.47 As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 45% at 1.31 mum), low dark count rate (DCR = 12 kHz), and low noise-equivalent power (NEP=4.5X 10 -17 W/Hz 1/2 W/Hz) at 200 K and 1.31 mum. A timing resolution of 140 ps was achieved with an SPDE of 45%. In addition, the dark current and DCR of a 4X4 SPAD array are reported.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2007.903855