Low cost wafer metrology using a NIR low coherence interferometry

In this investigation, a low cost Si wafer metrology system based on low coherence interferometry using NIR light is proposed and verified. The whole system consists of two low coherence interferometric principles: low coherence scanning interferometry (LCSI) for measuring surface profiles and spect...

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Bibliographic Details
Published in:Optics express 2013-06, Vol.21 (11), p.13648-13655
Main Authors: Kim, Young Gwang, Seo, Yong Bum, Joo, Ki-Nam
Format: Article
Language:English
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Summary:In this investigation, a low cost Si wafer metrology system based on low coherence interferometry using NIR light is proposed and verified. The whole system consists of two low coherence interferometric principles: low coherence scanning interferometry (LCSI) for measuring surface profiles and spectrally-resolved interferometry (SRI) to obtain the nominal optical thickness of the double-sided polished Si wafer. The combination of two techniques can reduce the measurement time and give adequate dimensional information of the Si wafer. The wavelength of the optical source is around 1 μm, for which transmission is non-zero for undoped silicon and can be also detected by a typical CCD camera. Because of the typical CCD camera, the whole system can be constructed inexpensively.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.013648