Optical characteristics of wurtzite ZnTe thin films

The growth of wurtzite ZnTe thin films with thickness between 250 and 1000nm on borosilicate glass substrates by electron beam evaporation is reported. The formation of the wurtzite structure was confirmed using X-ray diffraction. The films showed diffraction peaks originating from the (110), (016)...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2013-06, Vol.16 (3), p.1002-1007
Main Authors: Kshirsagar, Sachin D., Ghanashyam Krishna, M., Tewari, Surya P.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Diffraction
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Refractive index
Refractivity
Semiconductors
Thin films
Wurtzite
Zinc
Zinc tellurides
ZnTe
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Summary:The growth of wurtzite ZnTe thin films with thickness between 250 and 1000nm on borosilicate glass substrates by electron beam evaporation is reported. The formation of the wurtzite structure was confirmed using X-ray diffraction. The films showed diffraction peaks originating from the (110), (016) and (116) planes, indicating absence of any preferred orientation. The transmission of all the films was of the order of 80% in the near IR region. The refractive index of the wurtzite ZnTe phase increased with increase in thickness from 3.0 at 250nm to 4.2 for the 1000nm thickness film at a wavelength of 1800nm. The optical band gap of these films increased with thickness showing values of 0.85, 0.9 and 0.98eV at 250, 400 and 1000nm thickness, respectively. Chemical composition studies revealed that the films were mildly non-stoichiometric with excess Te. Comparison with the zinc blende structure of ZnTe shows that the wurtzite structure has a higher refractive index, lower band gap and lower charge carrier concentration.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2013.02.015