Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model

The unipolar resistive switches are investigated in silicon highly rich SiOx (x  1.8) based devices, our Pt/SiO0.73/Pt devices operate at lower voltage regime (

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Bibliographic Details
Published in:Applied physics letters 2013-01, Vol.102 (4)
Main Authors: Wang, Yuefei, Qian, Xinye, Chen, Kunji, Fang, Zhonghui, Li, Wei, Xu, Jun
Format: Article
Language:English
Subjects:
Devices
Electric potential
Percolation
Platinum
Silicon
Silicon dioxide
Switches
Voltage
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Description
Summary:The unipolar resistive switches are investigated in silicon highly rich SiOx (x  1.8) based devices, our Pt/SiO0.73/Pt devices operate at lower voltage regime (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4776695