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Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector

We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 1010. The detector shows UV-visible rejection ratio of 104 and cut-off wavelength of 376 nm. The device has low...

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Bibliographic Details
Published in:Applied physics letters 2012-07, Vol.101 (3)
Main Authors: Ivanoff Reyes, Pavel, Ku, Chieh-Jen, Duan, Ziqing, Xu, Yi, Garfunkel, Eric, Lu, Yicheng
Format: Article
Language:English
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Summary:We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 μm/5 μm and has a current on-off ratio of 1010. The detector shows UV-visible rejection ratio of 104 and cut-off wavelength of 376 nm. The device has low dark current of 5 × 10−14 A. The persistent photoconductivity is suppressed through oxygen plasma treatment of the channel surface which significantly reduces the density of oxygen vacancy confirmed by XPS measurements. The proper gate bias-control further reduces recovery time. The UV-TFT configuration is particularly suitable for making large-area imaging arrays.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4737648