Demonstration and modeling of multi-bit resistance random access memory

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability condit...

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Bibliographic Details
Published in:Applied physics letters 2013-01, Vol.102 (4)
Main Authors: Yang, Xiang, Chen, Albert B. K., Joon Choi, Byung, Chen, I-Wei
Format: Article
Language:English
Subjects:
Distribution functions
Random access memory
Serials
Stability
Switching
Voltage pulses
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Summary:Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4790158