Dynamics of charge flow in the channel of a thin-film field-effect transistor

The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of “zero applied current”: zero d...

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Bibliographic Details
Published in:Journal of applied physics 2012-11, Vol.112 (9)
Main Authors: Bittle, E. G., Brill, J. W., Straley, J. P.
Format: Article
Language:English
Subjects:
Approximation
Channels
Charge
Electric potential
Gates
Semiconductor devices
Thin films
Transistors
Voltage
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Summary:The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of “zero applied current”: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4764896