Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

We report on a correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures, employing Schottky barrier diodes. Photo-capacitance spectroscopy measurements reveal three specific deep levels located at ∼2.07, ∼2.80, and ∼3.23 eV below the conduction band,...

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Bibliographic Details
Published in:Journal of applied physics 2012-11, Vol.112 (10)
Main Authors: Nakano, Yoshitaka, Irokawa, Yoshihiro, Sumida, Yasunobu, Yagi, Shuichi, Kawai, Hiroji
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Correlation
Defects
Diodes
Gallium
Gallium nitrides
Recovery
Vacancies
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Summary:We report on a correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures, employing Schottky barrier diodes. Photo-capacitance spectroscopy measurements reveal three specific deep levels located at ∼2.07, ∼2.80, and ∼3.23 eV below the conduction band, presumably attributable to Ga vacancies and/or impurity C present in the GaN buffer layer. Additionally, from photo-assisted turn-on current recovery measurements, by using 390 and 370 nm long-pass filters, the recovery time becomes significantly faster due to inactivation of their corresponding deep-level traps. Therefore, the ∼2.80 and ∼3.23 eV levels are probably responsible for the carrier-trapping phenomena in the bulk region.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4767367