Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in...

Full description

Saved in:
Bibliographic Details
Published in:Optical and quantum electronics 2013-07, Vol.45 (7), p.597-604
Main Authors: Xia, Chang Sheng, Simon Li, Z. M., Sheng, Yang, Cheng, Li Wen, Hu, Wei Da, Lu, Wei
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
Computer simulation
Current carriers
Electrical Engineering
Gallium nitrides
Indium gallium nitrides
Lasers
Light-emitting diodes
Mathematical models
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Quantum wells
Transport
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-012-9647-z