Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in...

Full description

Saved in:
Bibliographic Details
Published in:Optical and quantum electronics 2013-07, Vol.45 (7), p.597-604
Main Authors: Xia, Chang Sheng, Simon Li, Z. M., Sheng, Yang, Cheng, Li Wen, Hu, Wei Da, Lu, Wei
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
Computer simulation
Current carriers
Electrical Engineering
Gallium nitrides
Indium gallium nitrides
Lasers
Light-emitting diodes
Mathematical models
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Quantum wells
Transport
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53
cites cdi_FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53
container_end_page 604
container_issue 7
container_start_page 597
container_title Optical and quantum electronics
container_volume 45
creator Xia, Chang Sheng
Simon Li, Z. M.
Sheng, Yang
Cheng, Li Wen
Hu, Wei Da
Lu, Wei
description Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.
doi_str_mv 10.1007/s11082-012-9647-z
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1429893690</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1429893690</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53</originalsourceid><addsrcrecordid>eNp9kD1PwzAQhi0EEuXjB7B5ZDE9O4mdjKiCUqmCAZCQGCzXcVpXid3ajir660kVZobTLc_76u5B6I7CAwUQ00gplIwAZaTiuSDHMzShhWCkpOLrHE0gA07KilaX6CrGLQDwvIAJ-n63Xd-qZL3DvsELN1ev02Fwa9ebRExnU7JujWvraxPxwaYNVth5R1qvVYv3vXKp7_DBtC1OQbm48yHhbqDbG3TRqDaa2799jT6fnz5mL2T5Nl_MHpdEZ4wmUmhTs2bVKArKQM5FXoISNQOmV4pmJUBdCyPqimVQK8gLQ7nRAJXiJc91kV2j-7F3F_y-NzHJzkY9HKSc8X2UNGdVWWW8ggGlI6qDjzGYRu6C7VT4kRTkSaQcRcpBpDyJlMchw8ZMHFi3NkFufR_c8NE_oV-UXXch</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1429893690</pqid></control><display><type>article</type><title>Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model</title><source>Springer Nature</source><creator>Xia, Chang Sheng ; Simon Li, Z. M. ; Sheng, Yang ; Cheng, Li Wen ; Hu, Wei Da ; Lu, Wei</creator><creatorcontrib>Xia, Chang Sheng ; Simon Li, Z. M. ; Sheng, Yang ; Cheng, Li Wen ; Hu, Wei Da ; Lu, Wei</creatorcontrib><description>Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-012-9647-z</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Computer simulation ; Current carriers ; Electrical Engineering ; Gallium nitrides ; Indium gallium nitrides ; Lasers ; Light-emitting diodes ; Mathematical models ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Quantum wells ; Transport</subject><ispartof>Optical and quantum electronics, 2013-07, Vol.45 (7), p.597-604</ispartof><rights>Springer Science+Business Media New York 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53</citedby><cites>FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Xia, Chang Sheng</creatorcontrib><creatorcontrib>Simon Li, Z. M.</creatorcontrib><creatorcontrib>Sheng, Yang</creatorcontrib><creatorcontrib>Cheng, Li Wen</creatorcontrib><creatorcontrib>Hu, Wei Da</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><title>Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.</description><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Computer simulation</subject><subject>Current carriers</subject><subject>Electrical Engineering</subject><subject>Gallium nitrides</subject><subject>Indium gallium nitrides</subject><subject>Lasers</subject><subject>Light-emitting diodes</subject><subject>Mathematical models</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum wells</subject><subject>Transport</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEuXjB7B5ZDE9O4mdjKiCUqmCAZCQGCzXcVpXid3ajir660kVZobTLc_76u5B6I7CAwUQ00gplIwAZaTiuSDHMzShhWCkpOLrHE0gA07KilaX6CrGLQDwvIAJ-n63Xd-qZL3DvsELN1ev02Fwa9ebRExnU7JujWvraxPxwaYNVth5R1qvVYv3vXKp7_DBtC1OQbm48yHhbqDbG3TRqDaa2799jT6fnz5mL2T5Nl_MHpdEZ4wmUmhTs2bVKArKQM5FXoISNQOmV4pmJUBdCyPqimVQK8gLQ7nRAJXiJc91kV2j-7F3F_y-NzHJzkY9HKSc8X2UNGdVWWW8ggGlI6qDjzGYRu6C7VT4kRTkSaQcRcpBpDyJlMchw8ZMHFi3NkFufR_c8NE_oV-UXXch</recordid><startdate>20130701</startdate><enddate>20130701</enddate><creator>Xia, Chang Sheng</creator><creator>Simon Li, Z. M.</creator><creator>Sheng, Yang</creator><creator>Cheng, Li Wen</creator><creator>Hu, Wei Da</creator><creator>Lu, Wei</creator><general>Springer US</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130701</creationdate><title>Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model</title><author>Xia, Chang Sheng ; Simon Li, Z. M. ; Sheng, Yang ; Cheng, Li Wen ; Hu, Wei Da ; Lu, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Computer simulation</topic><topic>Current carriers</topic><topic>Electrical Engineering</topic><topic>Gallium nitrides</topic><topic>Indium gallium nitrides</topic><topic>Lasers</topic><topic>Light-emitting diodes</topic><topic>Mathematical models</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum wells</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xia, Chang Sheng</creatorcontrib><creatorcontrib>Simon Li, Z. M.</creatorcontrib><creatorcontrib>Sheng, Yang</creatorcontrib><creatorcontrib>Cheng, Li Wen</creatorcontrib><creatorcontrib>Hu, Wei Da</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xia, Chang Sheng</au><au>Simon Li, Z. M.</au><au>Sheng, Yang</au><au>Cheng, Li Wen</au><au>Hu, Wei Da</au><au>Lu, Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2013-07-01</date><risdate>2013</risdate><volume>45</volume><issue>7</issue><spage>597</spage><epage>604</epage><pages>597-604</pages><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11082-012-9647-z</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0306-8919
ispartof Optical and quantum electronics, 2013-07, Vol.45 (7), p.597-604
issn 0306-8919
1572-817X
language eng
recordid cdi_proquest_miscellaneous_1429893690
source Springer Nature
subjects Characterization and Evaluation of Materials
Computer Communication Networks
Computer simulation
Current carriers
Electrical Engineering
Gallium nitrides
Indium gallium nitrides
Lasers
Light-emitting diodes
Mathematical models
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Quantum wells
Transport
title Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T23%3A27%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Simulation%20of%20InGaN/GaN%20light-emitting%20diodes%20with%20a%20non-local%20quantum%20well%20transport%20model&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Xia,%20Chang%20Sheng&rft.date=2013-07-01&rft.volume=45&rft.issue=7&rft.spage=597&rft.epage=604&rft.pages=597-604&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-012-9647-z&rft_dat=%3Cproquest_cross%3E1429893690%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c321t-5ced2fbfa10ae0467480a7d202cba13800dd7e7d9230da045e16ec009a6864c53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1429893690&rft_id=info:pmid/&rfr_iscdi=true