Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FM L /I/FM W /I/FM R , where the magnetization of the middle ferromagnetic metal layer FM W can be aligned parallel or antiparallel with respect to...

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Bibliographic Details
Published in:Journal of superconductivity and novel magnetism 2012-12, Vol.25 (8), p.2573-2576
Main Authors: Useinov, A. N., Useinov, N. K., Tagirov, L. R., Kosel, J.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Ferromagnetism
Magnetic Materials
Magnetism
Magnetization
Mathematical analysis
Nanocomposites
Nanostructure
Original Paper
Physics
Physics and Astronomy
Strongly Correlated Systems
Superconductivity
Tunnel junctions
Tunnel magnetoresistance
Voltage
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Summary:We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FM L /I/FM W /I/FM R , where the magnetization of the middle ferromagnetic metal layer FM W can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FM L and right FM R ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FM W .
ISSN:1557-1939
1557-1947
DOI:10.1007/s10948-011-1221-6