The effect of microstructure on the laser-induced transverse voltage in Pb-doped Bi2Sr2Co2O y thin films on tilted substrates

Pb-doped Bi2Sr2Co2O y thin films were prepared on tilted LaAlO3(001) by using the chemical solution deposition technique under different annealing temperatures and its laser-induced transverse voltage effect was investigated by using a 308 nm pulsed radiation. The shape of the laser-induced voltages...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2013-06, Vol.111 (4), p.1203-1206
Main Authors: Yan, Guoying, Wang, Shufang, Chen, Shanshan, Liu, Fuqiang, Bai, Zilong, Wang, Jianglong, Yu, Wei, Fu, Guangsheng
Format: Article
Language:English
Subjects:
Deposition
Electric potential
Grain size
Lead (metal)
Microstructure
Thermoelectricity
Thin films
Voltage
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Summary:Pb-doped Bi2Sr2Co2O y thin films were prepared on tilted LaAlO3(001) by using the chemical solution deposition technique under different annealing temperatures and its laser-induced transverse voltage effect was investigated by using a 308 nm pulsed radiation. The shape of the laser-induced voltages in these films depended strongly on the film microstructure. Films with a larger grain size and better crystalline quality had a voltage signal with greater amplitude and faster response time. The experimental results can be explained by a mechanism involving the transverse thermoelectric effect as well as the transport theory of thermoelectric materials.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-012-7366-8