OMVPE of InAs quantum dots on an InGaP surface

The organometallic vapor phase epitaxy of InAs quantum dots has been investigated by comparing the effect the underlying surface has on the quantum dot physical characteristics. Atomic force microscopy measurements were used to identify the InAs QDs coalesce to significantly larger size when deposit...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2013-08, Vol.16 (4), p.1148-1153
Main Authors: Forbes, David V., Podell, A.M., Slocum, M.A., Polly, S.J., Hubbard, S.M.
Format: Article
Language:English
Subjects:
Applied sciences
Coalescing
Cross-disciplinary physics: materials science
rheology
Deposition
Electronics
Epitaxy
Exact sciences and technology
Gallium arsenide
Gallium arsenides
InAs
Indium
Indium arsenides
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular electronics, nanoelectronics
Nanoscale materials and structures: fabrication and characterization
Other materials
Physics
Quantum dots
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Specific materials
Vapor phase epitaxy
growth from vapor phase
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Summary:The organometallic vapor phase epitaxy of InAs quantum dots has been investigated by comparing the effect the underlying surface has on the quantum dot physical characteristics. Atomic force microscopy measurements were used to identify the InAs QDs coalesce to significantly larger size when deposited on an InGaP surface compared to a GaAs surface. Quantitative assessment of the total QD volume on different surfaces such as GaAs, InGaP, and GaAsP implicates the role of indium in the underlying surface for the increase in QD size on InGaP surfaces.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2013.02.011