Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA

Nickel fully silicided（Ni-FUSI） gate material has been fabricated on a HfO2 surface to form a Ni-FUSI gate/HfO2/Al（MIS） structure by using an ultra-high vacuum e-beam evaporation（EBV） method followed by a one step rapid thermal annealing（RTA） treatment.X-ray diffraction（XRD） and Raman spectroscopy w...

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Published in:Journal of semiconductors 2012-03, Vol.33 (3), p.122-124
Main Authors: Zhang, Youwei, Xu, Dawei, Wan, Li, Wang, Zhongjian, Xia, Chao, Cheng, Xinhong, Yu, Yuehui
Format: Article
Language:English
Subjects:
EB病毒
Epstein-Barr virus
HfO2薄膜
MIS结构
单步
快速热退火
电性能
超高真空电子束蒸发
镍硅化物
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container_end_page 124
container_issue 3
container_start_page 122
container_title Journal of semiconductors
container_volume 33
creator Zhang, Youwei
Xu, Dawei
Wan, Li
Wang, Zhongjian
Xia, Chao
Cheng, Xinhong
Yu, Yuehui
description Nickel fully silicided（Ni-FUSI） gate material has been fabricated on a HfO2 surface to form a Ni-FUSI gate/HfO2/Al（MIS） structure by using an ultra-high vacuum e-beam evaporation（EBV） method followed by a one step rapid thermal annealing（RTA） treatment.X-ray diffraction（XRD） and Raman spectroscopy were used to reveal the microstructures and electrical properties of the MIS structure.Results show that a one step post RTA treatment is enough to promote the full reaction of nickel silicide,compared with multiple RTA treatments. Furthermore,the HfO2 gate dielectric film is sensitive to heat treatment,and multiple RTA treatments can damage the electrical properties of the HfO2 film rather than improve them.By optimization of the sample fabrication technique,the MIS capacitor produces good high-frequency capacitance-voltage curves with a hysteresis of 30 mV, a work function of about 5.44-5.53 eV and leakage current density of only 1.45×10~（-8） A/cm~2 at -1V gate bias.
doi_str_mv 10.1088/1674-4926/33/3/036003
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subjects EB病毒
Epstein-Barr virus
HfO2薄膜
MIS结构
单步
快速热退火
电性能
超高真空电子束蒸发
镍硅化物
title Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA
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