Room temperature nanoscale ferroelectricity in magnetoelectric GaFeO3 epitaxial thin films

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric gallium ferrite. Piezoforce measurements show a 180° phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in the thin films. Further, temperature-dependent...

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Bibliographic Details
Published in:Physical review letters 2013-08, Vol.111 (8), p.087601-087601
Main Authors: Mukherjee, Somdutta, Roy, Amritendu, Auluck, Sushil, Prasad, Rajendra, Gupta, Rajeev, Garg, Ashish
Format: Article
Language:English
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Summary:We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric gallium ferrite. Piezoforce measurements show a 180° phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in the thin films. Further, temperature-dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magnetodielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier but also give rise to the observed ferroelectricity, making gallium ferrite a unique single phase multiferroic.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.111.087601