Controlled Growth of Atomically Thin In2Se3 Flakes by van der Waals Epitaxy

The controlled production of high-quality atomically thin III–VI semiconductors poses a challenge for practical applications in electronics, optoelectronics, and energy science. Here, we exploit a controlled synthesis of single- and few-layer In2Se3 flakes on different substrates, such as graphene a...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2013-09, Vol.135 (36), p.13274-13277
Main Authors: Lin, Min, Wu, Di, Zhou, Yu, Huang, Wei, Jiang, Wei, Zheng, Wenshan, Zhao, Shuli, Jin, Chuanhong, Guo, Yunfan, Peng, Hailin, Liu, Zhongfan
Format: Article
Language:English
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Summary:The controlled production of high-quality atomically thin III–VI semiconductors poses a challenge for practical applications in electronics, optoelectronics, and energy science. Here, we exploit a controlled synthesis of single- and few-layer In2Se3 flakes on different substrates, such as graphene and mica, by van der Waals epitaxy. The thickness, orientation, nucleation site, and crystal phase of In2Se3 flakes were well-controlled by tuning the growth condition. The obtained In2Se3 flakes exhibit either semiconducting or metallic behavior depending on the crystal structures. Meanwhile, field-effect transistors based on the semiconducting In2Se3 flakes showed an efficient photoresponse. The controlled growth of atomically thin In2Se3 flakes with diverse conductivity and efficient photoresponsivity could lead to new applications in photodetectors and phase change memory devices.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja406351u