Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques

In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap...

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Bibliographic Details
Published in:International journal of computer applications 2013-08, Vol.75 (18), p.4-13
Main Authors: Raj, Balwant, Bindra, Sukhleen
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Computer simulation
Electrical measurement
Gallium nitrides
Heat transfer
High electron mobility transistors
Mathematical analysis
Semiconductor devices
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Summary:In this paper, the temperature dependent electrical measurements by employing a Quantum Focus Instrument (QFI) and analytical analysis were presented and applied to Aluminum Gallium Nitride, Gallium Nitride (AlGaN-GaN) High Electron-Mobility Transistors (HEMTs). The analytical evaluation of band bap energy, electron mobility, thermal conductivity and thermal resistance has been carried out. The electrical measurements have been done using network analyzer with infrared IR measurement technology. The results obtained on the basis of electrical measurements are compared with analytical and simulated results for the purpose of validation of our outcomes. The measured data shows a good agreement with analytical and simulated results, thereby validating our approach of AlGaN/GaN HEMT analysis.
ISSN:0975-8887
0975-8887
DOI:10.5120/13346-9922