Low Phase Noise and Wide Tuning Range VCO Using the MOS Differential Amplifier with Active Load

We demonstrate the design of a novel voltage-controlled oscillator (VCO), which is based on a metal-oxide-semiconductor field-effect transistor (MOS) differential amplifier with active load. This VCO achieves low phase noise and wide tuning range. The phase noise is -120 dBc/Hz at 600 KHz offset fro...

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Bibliographic Details
Published in:Circuits and systems (Irvine, Calif.) Calif.), 2012-10, Vol.3 (4), p.307-310
Main Authors: Tsai, Cher-Shiung, Gan, Kwang-Jow, Lin, Ming-Shin
Format: Article
Language:English
Subjects:
Differential amplifiers
Electric potential
Metal oxide semiconductors
Noise
Oscillators
Tuning
Voltage
Voltage controlled oscillators
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Summary:We demonstrate the design of a novel voltage-controlled oscillator (VCO), which is based on a metal-oxide-semiconductor field-effect transistor (MOS) differential amplifier with active load. This VCO achieves low phase noise and wide tuning range. The phase noise is -120 dBc/Hz at 600 KHz offset from a 1.216 GHz carrier frequency. This value is comparable to that of a LC-based integrated oscillator. The operating frequency can be tuned from 117 MHz to 1.216 GHz with the supply voltage varying from 1.3 V to 3.3 V. Therefore, the tuning range is about 90.38% which is larger than most of the LC and ring oscillator. The VCO circuit, which is constructed using a standard 0.35 mu m CMOS technology, occupies only 26.25 7.52 mu m2 die area and dissipated 10.56 mW under a 3.3 V supply voltage.
ISSN:2153-1285
2153-1293
DOI:10.4236/cs.2012.34043