Absorption coefficient for the intraband transitions in quantum dot materials

ABSTRACT In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation o...

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Bibliographic Details
Published in:Progress in photovoltaics 2013-06, Vol.21 (4), p.658-667
Main Authors: Luque, Antonio, Martí, Antonio, Mellor, Alex, Fuertes Marrón, D., Tobías, I., Antolín, E.
Format: Article
Language:English
Subjects:
absorption
Absorption coefficient
Applied sciences
Conduction band
Energy
Exact sciences and technology
intermediate band solar cell
Mathematical analysis
Mathematical models
Natural energy
Photovoltaic conversion
quantum calculations
quantum dot
Quantum dots
Semiconductors
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:ABSTRACT In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright © 2012 John Wiley & Sons, Ltd. In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.1250