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Absorption coefficient for the intraband transitions in quantum dot materials
ABSTRACT In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation o...
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| Published in: | Progress in photovoltaics 2013-06, Vol.21 (4), p.658-667 |
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| Main Authors: | , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c4940-22d4a051fa9514cd4ee2f52dc97119b437e5d76defc13288708e42be676609003 |
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| cites | cdi_FETCH-LOGICAL-c4940-22d4a051fa9514cd4ee2f52dc97119b437e5d76defc13288708e42be676609003 |
| container_end_page | 667 |
| container_issue | 4 |
| container_start_page | 658 |
| container_title | Progress in photovoltaics |
| container_volume | 21 |
| creator | Luque, Antonio Martí, Antonio Mellor, Alex Fuertes Marrón, D. Tobías, I. Antolín, E. |
| description | ABSTRACT
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright © 2012 John Wiley & Sons, Ltd.
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. |
| doi_str_mv | 10.1002/pip.1250 |
| format | article |
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In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright © 2012 John Wiley & Sons, Ltd.
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In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright © 2012 John Wiley & Sons, Ltd.
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band.</description><subject>absorption</subject><subject>Absorption coefficient</subject><subject>Applied sciences</subject><subject>Conduction band</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>intermediate band solar cell</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>quantum calculations</subject><subject>quantum dot</subject><subject>Quantum dots</subject><subject>Semiconductors</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><issn>1062-7995</issn><issn>1099-159X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp1kFtLHTEURgex4KWCP2GgCH0ZzT2TR7He8NT6UGnxJeRkdjB2zmRMMqj_3gweFIQ-fZuwWDv7q6p9jA4xQuRo9OMhJhxtVNsYKdVgrv5uzrMgjVSKb1U7KT0ghGWrxHb183iZQhyzD0NtAzjnrYch1y7EOt9D7YcczdIMXV1ySH4GU3mtHycz5GlVdyHXK5MhetOnr9UXVwL21rlb3Z6d_j65aBa_zi9PjheNZYqhhpCOGcSxM4pjZjsGQBwnnVUSY7VkVALvpOjAWUxJ20rUAiNLEFIIpBCiu9X3N-8Yw-MEKeuVTxb63gwQpqQxo0pSUc4t6LdP6EOY4lB-pzHlnKKWKPEhtDGkFMHpMfqViS8aIz33qkuveu61oAdroUnW9K7UYn1654mkLcVsXty8cU--h5f_-vTN5c3au-Z9yvD8zpv4TwtJJdd_rs_19QL_uLvjrb6irwEzlHw</recordid><startdate>201306</startdate><enddate>201306</enddate><creator>Luque, Antonio</creator><creator>Martí, Antonio</creator><creator>Mellor, Alex</creator><creator>Fuertes Marrón, D.</creator><creator>Tobías, I.</creator><creator>Antolín, E.</creator><general>Blackwell Publishing Ltd</general><general>Wiley</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>201306</creationdate><title>Absorption coefficient for the intraband transitions in quantum dot materials</title><author>Luque, Antonio ; Martí, Antonio ; Mellor, Alex ; Fuertes Marrón, D. ; Tobías, I. ; Antolín, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4940-22d4a051fa9514cd4ee2f52dc97119b437e5d76defc13288708e42be676609003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>absorption</topic><topic>Absorption coefficient</topic><topic>Applied sciences</topic><topic>Conduction band</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>intermediate band solar cell</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Natural energy</topic><topic>Photovoltaic conversion</topic><topic>quantum calculations</topic><topic>quantum dot</topic><topic>Quantum dots</topic><topic>Semiconductors</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luque, Antonio</creatorcontrib><creatorcontrib>Martí, Antonio</creatorcontrib><creatorcontrib>Mellor, Alex</creatorcontrib><creatorcontrib>Fuertes Marrón, D.</creatorcontrib><creatorcontrib>Tobías, I.</creatorcontrib><creatorcontrib>Antolín, E.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>Progress in photovoltaics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luque, Antonio</au><au>Martí, Antonio</au><au>Mellor, Alex</au><au>Fuertes Marrón, D.</au><au>Tobías, I.</au><au>Antolín, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Absorption coefficient for the intraband transitions in quantum dot materials</atitle><jtitle>Progress in photovoltaics</jtitle><addtitle>Prog. Photovolt: Res. Appl</addtitle><date>2013-06</date><risdate>2013</risdate><volume>21</volume><issue>4</issue><spage>658</spage><epage>667</epage><pages>658-667</pages><issn>1062-7995</issn><eissn>1099-159X</eissn><coden>PPHOED</coden><abstract>ABSTRACT
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright © 2012 John Wiley & Sons, Ltd.
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band.</abstract><cop>Bognor Regis</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pip.1250</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Progress in photovoltaics, 2013-06, Vol.21 (4), p.658-667 |
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| subjects | absorption Absorption coefficient Applied sciences Conduction band Energy Exact sciences and technology intermediate band solar cell Mathematical analysis Mathematical models Natural energy Photovoltaic conversion quantum calculations quantum dot Quantum dots Semiconductors Solar cells. Photoelectrochemical cells Solar energy |
| title | Absorption coefficient for the intraband transitions in quantum dot materials |
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