A four-channel parallel 40 Gb/s laser diode voltage driver in 0.18-μm CMOS

This article describes the design of a four‐channel parallel 40 Gb/s laser diode voltage driver (LDVD) circuit using 0.18‐μm CMOS technology.The LDVD circuit consists of input buffer stage, preamplifier stage, and output driver stage. The LDVD uses dual power supplies, including the 1.8‐V supply in...

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Bibliographic Details
Published in:Microwave and optical technology letters 2013-07, Vol.55 (7), p.1540-1543
Main Authors: Yingmei, Chen, Dawei, Zai, Li, Zhang, Wei, Li
Format: Article
Language:English
Subjects:
Channels
Circuit design
CMOS
Driver stages
Electric potential
isolation
laser diode voltage driver
Laser diodes
parallel laser diode driver
Preamplifiers
RC negative feedback
Voltage
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Summary:This article describes the design of a four‐channel parallel 40 Gb/s laser diode voltage driver (LDVD) circuit using 0.18‐μm CMOS technology.The LDVD circuit consists of input buffer stage, preamplifier stage, and output driver stage. The LDVD uses dual power supplies, including the 1.8‐V supply in the preamplifier stage and the 3.5‐V supply in the output driver stage. To increase the bandwidth, the preamplifier stage is made up of two‐stage cascaded differential amplifiers. The output driver circuit uses the RC negative feedback and capacitively coupled current amplifier (C3A) structure to speed up the operation of laser diode. The isolation has been carefully taken to avoid the cross‐talk issues among channels. Experimental results show that each channel of the LDVD can work at 10 Gb/s rate, and the output current swing is over 10 mA. The total power dissipation is 450 mW, and the chip area is 460 × 1230 μm2. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1540–1543, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27635
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.27635