A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor

Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM)....

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2013-01, Vol.25 (4), p.534-538
Main Authors: Prezioso, Mirko, Riminucci, Alberto, Graziosi, Patrizio, Bergenti, Ilaria, Rakshit, Rajib, Cecchini, Raimondo, Vianelli, Anna, Borgatti, Francesco, Haag, Norman, Willis, M., Drew, Alan J., Gillin, William P., Dediu, Valentin A.
Format: Article
Language:English
Subjects:
Architecture
Devices
Gates
Giant magnetoresistance
IMP
Logic
logic gates
memory
memristors
non-volatile materials
Proving
Spintronics
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Summary:Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201202031