Silicon nanotips formed by self-assembled Au nanoparticle mask

The Au nanoparticle monolayer is formed by self-assembly technology on the Si substrates terminated with different functional groups. Silicon nanotips were fabricated by a self-assembled gold colloidal particle monolayer as an etch mask. The silicon nanotips with high density and uniformity in heigh...

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Bibliographic Details
Published in:Journal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology 2010-06, Vol.12 (5), p.1821-1828
Main Authors: Wang, Ying, Zhu, Linpei, Zhang, Yafei, Yang, Minglai
Format: Article
Language:English
Subjects:
Arrays
Characterization and Evaluation of Materials
Chemistry and Materials Science
Etching
Gold
Inorganic Chemistry
Lasers
Materials Science
Nanocomposites
Nanomaterials
Nanoparticles
Nanostructure
Nanotechnology
Optical Devices
Optics
Photonics
Physical Chemistry
Research Paper
Silicon
Silicon substrates
Substrates
Thin films
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Summary:The Au nanoparticle monolayer is formed by self-assembly technology on the Si substrates terminated with different functional groups. Silicon nanotips were fabricated by a self-assembled gold colloidal particle monolayer as an etch mask. The silicon nanotips with high density and uniformity in height and shape were obtained using reactive ion etching (RIE). The Si nanotips on the surface of the 3-aminopropyltrimethoxysilane (APTMS)-treated Si substrate are less-ordered array and uniformity than 3-mercaptopropyltrimethoxysilane (MPTMS)-treated Si substrate at the same etching conditions. The ordered array and uniformity of Si nanotips on the APTMS-modified Si substrate was improved through heat-treatment. This result is implied the different functional groups on the Si surfaces could affect the formation of the Si nanostructures during RIE process. The uniformly nanotip pattern with height of >20 nm is obtained on the etched nanoparticle-coated Si substrate. This method can be applied to patterning a wide variety of thin film materials into tip arrays.
ISSN:1388-0764
1572-896X
DOI:10.1007/s11051-009-9741-8