Electron microscope study of dislocations introduced by deformation in a Si between 77 and 873 K

Dislocations were introduced into Si by scratching between 77 and 873 K. The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated disloc...

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Bibliographic Details
Published in:Journal of materials science 2013-01, Vol.48 (1), p.115-124
Main Authors: Okuno, T., Saka, H.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography
Crystallography and Scattering Methods
Dislocations
Electron microscopes
EM in Industry
Glide
Materials Science
Orientation
Polymer Sciences
Scratching
Silicon
Solid Mechanics
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Summary:Dislocations were introduced into Si by scratching between 77 and 873 K. The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated dislocations of the glide set. At 77 K, the shuffle set of dislocations was very straight; between RT and 363 K, the shuffle set of dislocations blunted, but mostly parallel to crystallographic orientations. Above 383 K, the shuffle set of dislocations was heavily zigzagged. The mechanism responsible for the zigzagging of the shuffle set of dislocations was discussed.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-012-6860-x