Impact-ionization-based resistive transition model for thin TiO2 films

This study tries to reproduce the unipolar “forming” process and the “reset” process of the Pt/TiO2/Pt capacitor. It is assumed that the impact ionization process triggers the “forming” process (so-called breakdown), and that the thermal energy generated by the conductive filament yields the “reset”...

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Published in:Journal of applied physics 2013-07, Vol.114 (4)
Main Authors: Omura, Yasuhisa, Kondo, Yusuke
Format: Article
Language:English
Subjects:
Electric potential
Filaments
Film thickness
Forming
Platinum
Titanium dioxide
Vacancies
Voltage
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description This study tries to reproduce the unipolar “forming” process and the “reset” process of the Pt/TiO2/Pt capacitor. It is assumed that the impact ionization process triggers the “forming” process (so-called breakdown), and that the thermal energy generated by the conductive filament yields the “reset” process through the annihilation of oxygen vacancies. Simulations of I–V characteristics successfully reproduce the unipolar “forming” and “reset” processes. It is demonstrated that the “forming” voltage rises as TiO2 film thickness increases, and that the “reset” voltage is insensitive to film thickness. The rise of the “forming” voltage stems from the increase in filament length and width. The insensitivity of “reset” voltage strongly suggests that the reaction energy of the oxygen ion with the vacancy is the critical parameter.
doi_str_mv 10.1063/1.4816688
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Electric potential
Filaments
Film thickness
Forming
Platinum
Titanium dioxide
Vacancies
Voltage
title Impact-ionization-based resistive transition model for thin TiO2 films
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