A Ka-band 22 dBm GaN amplifier MMIC

A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length...

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Bibliographic Details
Published in:Journal of semiconductors 2011-08, Vol.32 (8), p.128-131
Main Author: 王东方 陈晓娟 袁婷婷 魏珂 刘新宇
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Amplifiers
dBm
Density
Domestic
Gallium nitrides
HEMT
High electron mobility transistors
Ka波段
MMIC
Semiconductor devices
Semiconductors
放大器
最大输出功率
氮化镓
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Summary:A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μm.Under V_（ds）=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 GHz.The output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of V_（ds）=10 V.
ISSN:1674-4926
DOI:10.1088/1674-4926/32/8/085011