Structure and gas sensing properties of nanocrystalline Fe-doped ZnO films prepared by spin coating method

Nanocrystalline Fe-doped ZnO films were obtained by spin coating, using zinc acetate and iron acetate as starting materials and N , N -dimethylformamide as solvent. Characteristic XRD patterns indicate that the films under study are single phase with the ZnO-like wurtzite structure. There are not an...

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Bibliographic Details
Published in:Journal of materials science 2013-06, Vol.48 (12), p.4305-4312
Main Authors: Rambu, A. P., Doroftei, C., Ursu, L., Iacomi, F.
Format: Article
Language:English
Subjects:
Acetates
Acetone
Atomic force microscopy
Atomic structure
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Coatings
Columnar structure
Crystallography and Scattering Methods
Cytokinins
Dimethylformamide
Electric properties
Gas sensors
Iron
Materials Science
Methods
Morphology
Nanocrystals
Operating temperature
Polymer Sciences
Sensitivity
Solid Mechanics
Spin coating
Wurtzite
Zinc acetate
Zinc coatings
Zinc oxide
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Summary:Nanocrystalline Fe-doped ZnO films were obtained by spin coating, using zinc acetate and iron acetate as starting materials and N , N -dimethylformamide as solvent. Characteristic XRD patterns indicate that the films under study are single phase with the ZnO-like wurtzite structure. There are not any secondary phases and Fe 2+ as well as Fe 3+ substitutes for Zn 2+ of ZnO host. Atomic force microscopy analysis revealed that the studied films are characterized by high-density columnar structure and the incorporation of Fe atoms into the ZnO lattice modified the surface morphology. The sensitivity, at three different gases, was investigated and it was observed that acetone is the test gas that produces the most significant changes in the electrical resistance of all studied samples. Experimental results indicate that the optimum operating temperature increases for Fe-doped ZnO films by comparison with the undoped one. Also, the values of sensitivity were found to depend on the dopant concentration in ZnO films.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-013-7245-5