Simulation study of new 3-terminal devices for high speed STT-RAM

To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation.The best switching speed of the new structu...

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Bibliographic Details
Published in:Journal of semiconductors 2011-07, Vol.32 (7), p.46-48
Main Author: 张树超 胡江峰 陈培毅 邓宁
Format: Article
Language:English
Subjects:
Devices
Dynamic structural analysis
Dynamics
High speed
RAM
Random access memory
Semiconductors
Simulation
STT
Switching
仿真
写入速度
终端设备
结构动态
自旋转移
随机存取存储器
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Summary:To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation.The best switching speed of the new structures is 120%faster than that of the rectangular 3-terminal device.The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.
ISSN:1674-4926
DOI:10.1088/1674-4926/32/7/074007