Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

4H-SiC junction barrier Schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on...

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Bibliographic Details
Published in:Journal of semiconductors 2011-06, Vol.32 (6), p.33-35
Main Author: 陈丰平 张玉明 吕红亮 张义门 郭辉 郭鑫
Format: Article
Language:English
Subjects:
Anodes
Barriers
Contact resistance
Diodes
Guards
Multilayers
Semiconductors
SiC
Voltage
击穿电压
制备
势垒
欧姆接触
特性
电流密度
肖特基二极管
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Summary:4H-SiC junction barrier Schottky（JBS）diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently,and the other is processed by depositing a Schottky metal multi-layer on the whole anode.The reverse performances are compared to find the influences of these factors.The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage,and with independent P-type ohmic contact manufacturing,the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore,the P-type ohmic contact is studied in this work.
ISSN:1674-4926
DOI:10.1088/1674-4926/32/6/064003