Characterization of CdMnTe radiation detectors using current and charge transients

• Published in: Journal of semiconductors 2013-07, Vol.34 (7), p.19-25
• Main Authors: Rafiei, R., Reinhard, M. I., Sarbutt, A., Uxa, S., Boardman, D., Watt, G. C., Belas, E., Kim, K., Bolotnikov, A. E., James, R. B.
• Format: Article
• Language: English
• Subjects: Bias; CdMnTe; Charge; Collection; Current pulses; Detectors; Electric charge; Radiation detectors; Semiconductors; 电子迁移率; 电流测量; 电荷收集效率; 瞬变; 表征; 辐射探测器; 飞行时间测量
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/34/7/073001

Charge transport characteristics of Cd_（0.95）Mn_（0.05）Te：In radiation detectors have been evaluated by combining time resolved current transient measurements with time of flight charge transient measurements.The shapes of the measured current pulses have been interpreted with respect to a concentration of net positive space-charge, which has resulted in an electric field gradient across the detector bulk.From the recorded current pulses the charge collection efficiency of the detector was found to approach 100%.From the evolution of the charge collection efficiency with applied bias,the electron mobility-lifetime product ofμ_nτ_n =（8.5±0.4）×10~（-4） cm~2/V has been estimated.The electron transit time was determined using both transient current technique and time of flight measurements in the bias range of 100-1900 V.From the dependence of drift velocity on applied electric field the electron mobility was found to beμ_n =（718±55） cm~2/（V·s） at room temperature.