H-plasma-assisted aluminum induced crystallization of amorphous silicon

A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens...

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Bibliographic Details
Published in:Journal of semiconductors 2012-06, Vol.33 (6), p.125-128
Main Author: 李娟 刘宁 罗翀 孟志国 熊绍珍 Hoi Sing Kwok
Format: Article
Language:English
Subjects:
Aluminum
Annealing
Crystallization
Hydrogen plasma
Radicals
Secondary ion mass spectrometry
Semiconductors
Thin films
二次离子质谱
工商行政管理机关
氢等离子体
氢自由基
等离子体辅助
结晶时间
铝诱导晶化
非晶硅
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Summary:A technique to improve and accelerate aluminum induced crystallization（AIC） by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm~2/（V·s）.The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/6/066003