Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency

Phase separations have been studied for graded-indium content In_xGa_（1-x）N/GaN multiple quantum wells（MQWs） with different indium contents by means of photoluminescence（PL）,cathodeluminescence（CL） and time-resolved PL（TRPL） techniques.Besides the main emission peaks,all samples show another 2 peaks...

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Bibliographic Details
Published in:Journal of semiconductors 2012-05, Vol.33 (5), p.13-16
Main Author: 郭洪英 孙元平 Yong-Hoon Cho Eun-Kyung Suh Hai-Joon Lee Rak-Jun Choi Yoon-Bong Hahn
Format: Article
Language:English
Subjects:
Delay
Gallium nitrides
Indium
Indium gallium nitrides
InGaN
Phase separation
Quantum wells
Semiconductors
Spectral emissivity
TRPL
光致发光
图像显示
多量子阱
相分离
量子效率
铟含量
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Summary:Phase separations have been studied for graded-indium content In_xGa_（1-x）N/GaN multiple quantum wells（MQWs） with different indium contents by means of photoluminescence（PL）,cathodeluminescence（CL） and time-resolved PL（TRPL） techniques.Besides the main emission peaks,all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K.CL images show a clear contrast for 3 samples,which indicates an increasing phase separation with increasing indium content.TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content,which means a carrier transferring from low indium content structures to high indium content structures.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/5/053001