Capacitance and conductance dispersion in AlGaN/GaN heterostructure

The dispersion mechanism in Al0：27Ga0：73N/GaN heterostructure was investigated using frequencydependent capacitance and conductance measurements.It was found that the significant capacitance and conductance dispersion occurred primarily for measurement frequency beyond 100 kHz before the channel cut...

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Bibliographic Details
Published in:Journal of semiconductors 2013, Vol.34 (1), p.35-38
Main Authors: Yan, Dawei, Wang, Fuxue, Zhu, Zhaomin, Cheng, Jianmin, Gu, Xiaofeng
Format: Article
Language:English
Subjects:
AlGaN
Capacitance
Channels
Conductance
Dispersions
Gallium nitrides
Heterostructures
Mathematical models
Semiconductors
分散机理
分散行为
异质结构
捕获机制
测量频率
电容
电导测量
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Summary:The dispersion mechanism in Al0：27Ga0：73N/GaN heterostructure was investigated using frequencydependent capacitance and conductance measurements.It was found that the significant capacitance and conductance dispersion occurred primarily for measurement frequency beyond 100 kHz before the channel cutoff at the interface,suggesting that the vertical polarization electrical field under the gate metal should be closely related with the observed dispersive behavior.According to the Schottky-Read-Hall model,a traditional trapping mechanism cannot be used to explain our result.Instead,a piezoelectric polarization strain relaxation model was adopted to interpret the dispersion.By fitting the obtained capacitance data,the corresponding characteristic time and charge density were determined 10..8 s and 5.26 1012 cm..2 respectively,in good agreement with the conductance data and theoretical prediction.
ISSN:1674-4926
DOI:10.1088/1674-4926/34/1/014003