Tungsten oxide nanostructures：controllable growth and field emission

Non-fully oxidized tungsten oxide（WO_（3-x）） nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission（FE） measurements showed that the obtained W_（18）O_（49） nanowires have excellent FE property.The turn-on fi...

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Bibliographic Details
Published in:Journal of semiconductors 2012-06, Vol.33 (6), p.10-13
Main Author: 岳双林 许婷婷 李伟 闫佶 一禾
Format: Article
Language:English
Subjects:
Field emission
Finite element method
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Semiconductors
Stability
化学气相沉积
可控生长
场发射
完全氧化
气体压力
纳米结构
钨氧化物
高电流密度
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Summary:Non-fully oxidized tungsten oxide（WO_（3-x）） nanostructures with controllable morphology were fabricated by adjusting the gas pressure in chemical vapor deposition.The comparative field emission（FE） measurements showed that the obtained W_（18）O_（49） nanowires have excellent FE property.The turn-on field was 7.1 V/μm for 10μA/cm~2 and the observed highest current density was 4.05 mA/cm~2 at a field of 17.2 V/μm.Good electron emission reproducibility was also observed during thermal evaporation and desorption testing.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/6/063002