A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique

A radiation-hardened-by-design phase-locked loop（PLL） with a frequency range of 200 to 1000 MHz is proposed.By presenting a novel charge compensation circuit,composed by a lock detector circuit,two operational amplifiers,and four MOS devices,the proposed PLL significantly reduces the recovery time a...

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Bibliographic Details
Published in:Journal of semiconductors 2012-10, Vol.33 (10), p.97-102
Main Author: 韩本光 郭仲杰 吴龙胜 刘佑宝
Format: Article
Language:English
Subjects:
CAD仿真
Charge
Circuits
Compensation
Computer simulation
Mathematical models
Phase locked loops
Recovery time
Semiconductors
事件
技术
硬化
补偿电路
设计阶段
辐射
锁相回路
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Summary:A radiation-hardened-by-design phase-locked loop（PLL） with a frequency range of 200 to 1000 MHz is proposed.By presenting a novel charge compensation circuit,composed by a lock detector circuit,two operational amplifiers,and four MOS devices,the proposed PLL significantly reduces the recovery time after the presence of a single event transient（SET）.Comparing with many traditional hardened methods,most of which endeavor to enhance the immunity of the charge pump output node to an SET,the novel PLL can also decrease its susceptibility in the presence of an SET in other blocks.A novel system model is presented to describe immunity of a PLL to an SET and used to compare the sensitivity of traditional and hardened PLLs to an SET.An SET is simulated on Sentaurus TCAD simulation workbench to model the induced pulse current.Post simulation with a 130 nm CMOS process model shows that the recovery time of the proposed PLL reduces by up to 93.5%compared with the traditional one,at the same time,the charge compensation circuit adds no complexity to the systemic parameter design.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/10/105007