Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

• Published in: Journal of semiconductors 2013-06, Vol.34 (6), p.165-169
• Main Author: 付作振 殷华湘 马小龙 柴淑敏 高建峰 陈大鹏
• Format: Article
• Language: English
• Subjects: Channels; Devices; Electrodes; Gates; NMOS器件; Physical vapor deposition; Semiconductors; Simulation; Stresses; 先进技术设备; 工艺优化; 应力值; 纳米; 结构设计; 膜过程; 金属栅极
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/34/6/066002

The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS devices.The characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping layer.The MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling down.In addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were investigated.Also with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was improved.For greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were optimized.The maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.