Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear device structures,and the electroluminescence intensity is shown to increases exponenti...

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Bibliographic Details
Published in:Journal of semiconductors 2012-06, Vol.33 (6), p.47-50
Main Author: 肖文波 何兴道 高益庆 张志敏 刘江涛
Format: Article
Language:English
Subjects:
Bias
前锋
太阳能电池
电致发光特性
直流偏压
直流偏置
砷化铟镓
磷化铟
远红外
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Summary:The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear device structures,and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current.The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells.The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/6/064008