Preparation and properties of polycrystalline silicon seed layers on graphite substrate

Polycrystalline silicon（poly-Si） seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700℃was the critical temperature in the formation of...

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Bibliographic Details
Published in:Journal of semiconductors 2012-11, Vol.33 (11), p.28-31
Main Author: 李宁 陈诺夫 白一鸣 何海洋
Format: Article
Language:English
Subjects:
Annealing
Crystal structure
Graphite
Magnetron sputtering
Preferred orientation
Seeds
Semiconductors
Silicon substrates
X射线衍射测量
制备
基板温度
多晶硅
性能
石墨
种子层
衬底温度
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Summary:Polycrystalline silicon（poly-Si） seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700℃was the critical temperature in the formation of Si（220） preferred orientation. When the substrate temperature is higher than 700℃,the peak intensity of X-ray diffraction（XRD） from Si（220） increases distinctly with the increasing of substrate temperature.Moreover,the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing （RTA） temperatures and time.Specifically,a higher annealing temperature and a longer annealing time could enhance the Si（220） preferred orientation of poly-Si seed layers.
ISSN:1674-4926
DOI:10.1088/1674-4926/33/11/113003