Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2013-09, Vol.112 (4), p.827-833
• Main Author: Demirezen, Selçuk
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Diodes; Electric potential; Electrical resistivity; Gold; Machines; Manufacturing; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Polarization; Polyvinyl alcohols; Processes; Resistivity; Surfaces and Interfaces; Thin Films; Voltage
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-013-7605-7

In this study, frequency and voltage dependence of dielectric constant ( ε ′), dielectric loss ( ε ″), loss tangent (tan δ ), the real and imaginary parts of electric modulus ( M ′ and M ″) and ac electrical conductivity ( σ ac ) of an Au/PVA (Bi-doped)/n-Si Schottky barrier diode have been investigated in detail by using experimental C – V and G – V measurements in the wide frequency range of 5 kHz–10 MHz and the voltage range of ±2 V at room temperature. Experimental results indicate that the values of ε ′, ε ″, tan δ and σ ac are strongly frequency and voltage dependent. It has found that the values of ε ′, ε ″ and tan δ decrease while the values of σ ac , M ′ and M ″ increase. It is clear that the values of M ″ show a distinctive peak with a U-shape and its position shifts towards the positive-bias region with increasing frequency. Such behavior of the peak can be attributed to the particular distribution of interface states located at the Si/PVA interface and interfacial polarization. It can be concluded that the interfacial polarization and the charge at the interface can easily follow the ac signal at low frequencies.