Modeling the applicability of linear energy transfer on single event upset occurrence

Geant4 tools were used to model the single event upset （SEU） of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effec...

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Bibliographic Details
Published in:Chinese physics C 2013-06, Vol.37 (6), p.52-58
Main Author: 耿超 刘杰 张战刚 习凯 古松 侯明东 孙友梅 段敬来 姚会军 莫丹 罗捷
Format: Article
Language:English
Subjects:
Cross sections
Deposition
Energy density
Energy distribution
Energy transfer
Geant4
Low energy
Radial distribution
Single event upsets
单粒子
模型
线性
能量转移
转发
适用性
重离子辐照
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Summary:Geant4 tools were used to model the single event upset （SEU） of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer （LET） which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU.
ISSN:1674-1137
0254-3052
DOI:10.1088/1674-1137/37/6/066001