Optical investigation of strong exciton localization in high Al composition AlxGa₁-xN alloys

The exciton localization in wurtzite AlxGa₁-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localiz...

Full description

Saved in:
Bibliographic Details
Published in:Optics express 2013-10, Vol.21 (21), p.24497-24503
Main Authors: Fan, Shunfei, Qin, Zhixin, He, Chenguang, Hou, Mengjun, Wang, Xinqiang, Shen, Bo, Li, Wei, Wang, Weiying, Mao, Defeng, Jin, Peng, Yan, Jianchang, Dong, Peng
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The exciton localization in wurtzite AlxGa₁-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa₁-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.21.024497