Temperature dependence of the single-photon sensitivity of a quantum dot, optically gated, field-effect transistor

We present a systematic study of the temperature dependence of the electrical noise in a quantum dot, optically gated, field-effect transistor (QDOGFET) and detail how the noise influences the sensitivity of these novel single-photon detectors. Previous studies have shown that when cooled to 4 K, QD...

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Bibliographic Details
Published in:Journal of applied physics 2013-09, Vol.114 (9)
Main Authors: Gansen, E. J., Rowe, M. A., Harrington, S. D., Nehls, J. M., Etzel, S. M., Nam, S. W., Mirin, R. P.
Format: Article
Language:English
Subjects:
Devices
Electrical noise
Operating temperature
Quantum dots
Semiconductor devices
Signal to noise ratio
Temperature dependence
Transistors
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Summary:We present a systematic study of the temperature dependence of the electrical noise in a quantum dot, optically gated, field-effect transistor (QDOGFET) and detail how the noise influences the sensitivity of these novel single-photon detectors. Previous studies have shown that when cooled to 4 K, QDOGFETs exhibit single-photon sensitivity and photon-number-resolving capabilities; however, there has been no systematic study of how operating temperature affects their performance. Here, we measure the noise spectra of a device for a range of sample temperatures between 7 K and 60 K. We use the noise data to determine the signal-to-noise ratio of the optical responses of the devices for various temperatures and detection rates. Our analysis indicates that QDOGFETs can operate over a broad range of temperatures, where increased operating temperature can be traded for decreased sensitivity.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4820474