Distance dependence of energy transfer from InGaN quantum wells to graphene oxide

We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been...

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Bibliographic Details
Published in:Optics letters 2013-08, Vol.38 (15), p.2897-2899
Main Authors: Lin, T N, Huang, L T, Shu, G W, Yuan, C T, Shen, J L, Lin, C A J, Chang, W H, Chiu, C H, Lin, D W, Lin, C C, Kuo, H C
Format: Article
Language:English
Subjects:
Decay
Energy Transfer
Gallium - chemistry
Graphene
Graphite - chemistry
Indium - chemistry
Indium gallium nitrides
Joining
Luminescence
Luminescent Measurements
Nitrogen Compounds - chemistry
Oxides
Oxides - chemistry
Quantum wells
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Summary:We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d² separation distance, which is dominated by the layer-to-layer dipole coupling.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.38.002897