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Microstructure and thermoelectric properties of tungsten trioxide ceramics doped with a low amount of terbium dioxide
The effect of the nonstoichiometric compound terbium dioxide (Tb 4 O 7 ) on the thermoelectric properties of tungsten trioxide (WO 3 ) ceramics was investigated. Among the sintered ceramics, the sample doped with 0.1 mol% Tb 4 O 7 showed the maximum grain size and density. Doping with Tb 4 O 7 also...
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Published in: | Journal of materials science. Materials in electronics 2013-10, Vol.24 (10), p.4001-4007 |
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creator | Gan, Yingjie Dong, Xiang Peng, Shujie Dong, Liang Wang, Yu |
description | The effect of the nonstoichiometric compound terbium dioxide (Tb
4
O
7
) on the thermoelectric properties of tungsten trioxide (WO
3
) ceramics was investigated. Among the sintered ceramics, the sample doped with 0.1 mol% Tb
4
O
7
showed the maximum grain size and density. Doping with Tb
4
O
7
also increased the electrical conductivity (
σ
) of the ceramics by about two orders of magnitude, and the sample doped with 0.1 mol% Tb
4
O
7
showed the highest electrical conductivity. The absolute value of Seebeck coefficient (|
S
|) of the doped samples increased as well. Consequently, the power factor (
σs
2
) markedly increased. The sample doped with 2.0 mol% Tb
4
O
7
demonstrated the maximum
σs
2
of 2.88 μW m
−1
K
−2
at 973 K, which was larger than the highest recorded
σs
2
for WO
3
ceramics (2.71 μW m
−1
K
−2
at 1,023 K). In addition, the low-doped sample (0.1 mol%) exhibited excellent thermoelectric properties. |
doi_str_mv | 10.1007/s10854-013-1353-5 |
format | article |
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4
O
7
) on the thermoelectric properties of tungsten trioxide (WO
3
) ceramics was investigated. Among the sintered ceramics, the sample doped with 0.1 mol% Tb
4
O
7
showed the maximum grain size and density. Doping with Tb
4
O
7
also increased the electrical conductivity (
σ
) of the ceramics by about two orders of magnitude, and the sample doped with 0.1 mol% Tb
4
O
7
showed the highest electrical conductivity. The absolute value of Seebeck coefficient (|
S
|) of the doped samples increased as well. Consequently, the power factor (
σs
2
) markedly increased. The sample doped with 2.0 mol% Tb
4
O
7
demonstrated the maximum
σs
2
of 2.88 μW m
−1
K
−2
at 973 K, which was larger than the highest recorded
σs
2
for WO
3
ceramics (2.71 μW m
−1
K
−2
at 1,023 K). In addition, the low-doped sample (0.1 mol%) exhibited excellent thermoelectric properties.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-013-1353-5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Dioxides ; Electrical conductivity ; Electrical resistivity ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in multilayers, nanoscale materials and structures ; Electronics ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials ; Materials Science ; Optical and Electronic Materials ; Physics ; Resistivity ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thermoelectricity ; Tungsten ; Tungsten oxides</subject><ispartof>Journal of materials science. Materials in electronics, 2013-10, Vol.24 (10), p.4001-4007</ispartof><rights>Springer Science+Business Media New York 2013</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-ea8a2eaec1add6fc8eb1506b62a863af0f3a2d70e7a9ccf88b645bb6744d7f653</citedby><cites>FETCH-LOGICAL-c379t-ea8a2eaec1add6fc8eb1506b62a863af0f3a2d70e7a9ccf88b645bb6744d7f653</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27795235$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gan, Yingjie</creatorcontrib><creatorcontrib>Dong, Xiang</creatorcontrib><creatorcontrib>Peng, Shujie</creatorcontrib><creatorcontrib>Dong, Liang</creatorcontrib><creatorcontrib>Wang, Yu</creatorcontrib><title>Microstructure and thermoelectric properties of tungsten trioxide ceramics doped with a low amount of terbium dioxide</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The effect of the nonstoichiometric compound terbium dioxide (Tb
4
O
7
) on the thermoelectric properties of tungsten trioxide (WO
3
) ceramics was investigated. Among the sintered ceramics, the sample doped with 0.1 mol% Tb
4
O
7
showed the maximum grain size and density. Doping with Tb
4
O
7
also increased the electrical conductivity (
σ
) of the ceramics by about two orders of magnitude, and the sample doped with 0.1 mol% Tb
4
O
7
showed the highest electrical conductivity. The absolute value of Seebeck coefficient (|
S
|) of the doped samples increased as well. Consequently, the power factor (
σs
2
) markedly increased. The sample doped with 2.0 mol% Tb
4
O
7
demonstrated the maximum
σs
2
of 2.88 μW m
−1
K
−2
at 973 K, which was larger than the highest recorded
σs
2
for WO
3
ceramics (2.71 μW m
−1
K
−2
at 1,023 K). In addition, the low-doped sample (0.1 mol%) exhibited excellent thermoelectric properties.</description><subject>Applied sciences</subject><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Dioxides</subject><subject>Electrical conductivity</subject><subject>Electrical resistivity</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in multilayers, nanoscale materials and structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Resistivity</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thermoelectricity</subject><subject>Tungsten</subject><subject>Tungsten oxides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp1kU1r1kAUhQdR8LX6A9wNiOAmdT4yH1lKsSpUurHQXbiZ3GmnJJnX-aD135uYIkVwdRf3OYdz7yHkLWennDHzMXNmVdswLhsulWzUM3LgysimteL6OTmwTpmmVUK8JK9yvmOM6VbaA6nfg0sxl1RdqQkpLCMtt5jmiBO6koKjxxSPmErATKOnpS43ueBC1118CCNShwnm4DIdV26k96HcUqBTvKcwx7qUPypMQ6gzHXfNa_LCw5TxzeM8IVfnn3-cfW0uLr98O_t00ThputIgWBAI6DiMo_bO4sAV04MWYLUEz7wEMRqGBjrnvLWDbtUwaNO2o_FayRPyYfddb_hZMZd-DtnhNMGCseaet6013Grerei7f9C7WNOyplspKZkxgsmV4ju1PS0n9P0xhRnSr56zfiui34vo1yL6rYh-C_H-0Rmyg8knWFzIf4XCmE4JuXFi5_K6Wm4wPUnwX_PfDCSbSA</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Gan, Yingjie</creator><creator>Dong, Xiang</creator><creator>Peng, Shujie</creator><creator>Dong, Liang</creator><creator>Wang, Yu</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><scope>7QQ</scope></search><sort><creationdate>20131001</creationdate><title>Microstructure and thermoelectric properties of tungsten trioxide ceramics doped with a low amount of terbium dioxide</title><author>Gan, Yingjie ; Dong, Xiang ; Peng, Shujie ; Dong, Liang ; Wang, Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-ea8a2eaec1add6fc8eb1506b62a863af0f3a2d70e7a9ccf88b645bb6744d7f653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Dioxides</topic><topic>Electrical conductivity</topic><topic>Electrical resistivity</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in multilayers, nanoscale materials and structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Resistivity</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thermoelectricity</topic><topic>Tungsten</topic><topic>Tungsten oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gan, Yingjie</creatorcontrib><creatorcontrib>Dong, Xiang</creatorcontrib><creatorcontrib>Peng, Shujie</creatorcontrib><creatorcontrib>Dong, Liang</creatorcontrib><creatorcontrib>Wang, Yu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>https://resources.nclive.org/materials</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Ceramic Abstracts</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gan, Yingjie</au><au>Dong, Xiang</au><au>Peng, Shujie</au><au>Dong, Liang</au><au>Wang, Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructure and thermoelectric properties of tungsten trioxide ceramics doped with a low amount of terbium dioxide</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2013-10-01</date><risdate>2013</risdate><volume>24</volume><issue>10</issue><spage>4001</spage><epage>4007</epage><pages>4001-4007</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The effect of the nonstoichiometric compound terbium dioxide (Tb
4
O
7
) on the thermoelectric properties of tungsten trioxide (WO
3
) ceramics was investigated. Among the sintered ceramics, the sample doped with 0.1 mol% Tb
4
O
7
showed the maximum grain size and density. Doping with Tb
4
O
7
also increased the electrical conductivity (
σ
) of the ceramics by about two orders of magnitude, and the sample doped with 0.1 mol% Tb
4
O
7
showed the highest electrical conductivity. The absolute value of Seebeck coefficient (|
S
|) of the doped samples increased as well. Consequently, the power factor (
σs
2
) markedly increased. The sample doped with 2.0 mol% Tb
4
O
7
demonstrated the maximum
σs
2
of 2.88 μW m
−1
K
−2
at 973 K, which was larger than the highest recorded
σs
2
for WO
3
ceramics (2.71 μW m
−1
K
−2
at 1,023 K). In addition, the low-doped sample (0.1 mol%) exhibited excellent thermoelectric properties.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-013-1353-5</doi><tpages>7</tpages></addata></record> |
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issn | 0957-4522 1573-482X |
language | eng |
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source | Springer Nature |
subjects | Applied sciences Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Dioxides Electrical conductivity Electrical resistivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Electronics Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials Materials Science Optical and Electronic Materials Physics Resistivity Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thermoelectricity Tungsten Tungsten oxides |
title | Microstructure and thermoelectric properties of tungsten trioxide ceramics doped with a low amount of terbium dioxide |
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