The origin of near-IR luminescence in bismuth-doped silica and germania glasses free of other dopants: First-principle study

First-principle study of possible bismuth-related centers in SiO sub(2) and GeO sub(2) glass model hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO interstitial molecule; interstitial...

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Bibliographic Details
Published in:Optical materials express 2013-08, Vol.3 (8), p.1059-1074
Main Authors: Sokolov, V. O., Plotnichenko, V. G., Dianov, E. M.
Format: Article
Language:English
Subjects:
Germanium oxides
Glass
Infrared radiation
Interstitials
Luminescence
Silica glass
Silicon dioxide
Spectra
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Summary:First-principle study of possible bismuth-related centers in SiO sub(2) and GeO sub(2) glass model hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO interstitial molecule; interstitial ion, Bi super(+), and atom, Bi super(0); Bi times times times identical with =Si-Si identical with and Bi times times times identical with Ge-Ge identical with complexes formed by interstitial Bi atoms and glass intrinsic defects, identical with Si-Si identical with or identical with Ge-Ge identical with oxygen vacancies; interstitial dimers, Bi super(0) sub(2) and Bi super(-) sub(2). Experimental data available on bismuth-related IR luminescence in SiO sub(2): Bi and GeO sub(2): Bi glasses, visible (red) luminescence in SiO sub(2): Bi glass and luminescence excitation are analyzed. A comparison of calculated spectral properties of bismuth-related centers with the experimental data shows that the IR luminescence in SiO sub(2): Bi and GeO sub(2): Bi is most likely caused by Bi times times times identical with Si-Si identical with and Bi times times times identical with Ge-Ge identical with complexes, and divalent Bi substitutional center is responsible for the red luminescence in SiO sub(2): Bi.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.3.001059