High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm(2)

High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving powe...

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Bibliographic Details
Published in:Optics express 2013-11, Vol.21 (22), p.27102-27110
Main Authors: Tsai, M L, Liao, J H, Yeh, J H, Hsu, T C, Hon, S J, Chung, T Y, Lai, K Y
Format: Article
Language:English
Online Access:Get full text
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Summary:High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving power of 670 W/cm(2), the high-voltage LEDs exhibit much alleviated efficiency droop and the operative temperature below 80 °C. The excellent performances were attributed to the improved current spreading within each sub-LED and the superior heat sinking of the ceramic substrate.
ISSN:1094-4087
DOI:10.1364/OE.21.027102