Melt zone growth of Ge-rich Ge sub(1-x)Si sub(x) bulk crystals

Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by > 90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, an...

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Bibliographic Details
Published in:Journal of crystal growth 2013-08, Vol.377, p.147-152
Main Authors: Kostylev, I, Woodacre, J K, Lee, Y P, Klages, P, Labrie, D
Format: Article
Language:English
Subjects:
Crystal growth
Crystals
Furnaces
Melts
Phase diagrams
Segregations
Silicon
Silicon germanides
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Summary:Melt zone growth of Ge-rich SiGe alloy was performed on 24 mm diameter by > 90 mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile alone the growth axis.
ISSN:0022-0248