Strain controlled ferroelectric switching time of BiFeO3 capacitors

The ferroelectric switching kinetics of BiFeO3 capacitors grown on a piezoelectric substrate has been investigated in different strain states and at various temperatures. The switching behavior is in good agreement with the Kolmogorov-Avrami-Ishibashi model. The effect of reversible biaxial in-plane...

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Bibliographic Details
Published in:Applied physics letters 2012-12, Vol.101 (24)
Main Authors: Guo, E J, Dorr, K, Herklotz, A
Format: Article
Language:English
Subjects:
Capacitors
Compressing
Ferroelectric materials
Ferroelectricity
Piezoelectricity
Retarding
Strain
Switching
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Summary:The ferroelectric switching kinetics of BiFeO3 capacitors grown on a piezoelectric substrate has been investigated in different strain states and at various temperatures. The switching behavior is in good agreement with the Kolmogorov-Avrami-Ishibashi model. The effect of reversible biaxial in-plane compression on the switching time is an enhancement at low electric field and a reduction at high field. The two field regimes are found to correspond to the creep and the depinning of domain walls. The strain effect on the switching time depends strongly on temperature and reaches a tenfold slowing down upon similar to 0.1% of biaxial compression at 50 K. This work provides a route to realize strain control of ferroelectric switching kinetics in BiFeO3 and is significant for potential applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4772006